FFP08S60STU【PDF 1/5 页】DIODE HYPERFAST 600V TO-220AC

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?2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FFP08S60S Rev. C1

FFP08S60S

—

STEALTH? II Diode

November 2013

FFP08S60S

8 A, 600 V, STEALTHTM

II Diode

Features

? Stealth Recovery trr

= 30 ns (@ I

= 8 A)

? Max Forward Voltage, VF

= 2.6 V (@ T

= 25°C)

? 600 V Reverse Voltage and High Reliability

? Avalanche Energy Rated

?RoHS Compliant

Applications

? General Purpose

? SMPS, Power Switching Circuits

? Boost Diode in Continuous Mode Power Factor Corrections

Description

The FFP08S60S is a STEALTH? II diode with soft recovery

characteristics. It is silicon nitride passivated ion-implanted epi-

taxial planar construction.

This device is intended for use as freewheeling of boost diode in

switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching

circuits reducing power loss in the switching transistors.

Pin Assignments

Absolute Maximum Ratings

Thermal Characteristics

1. Cathode 2. Anode

TO-220-2L

1. Cathode 2. Anode

Symbol Parameter Rating Unit

VRRM

Peak Repetitive Reverse Voltage 600 V

VRWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

IF(AV)

Average Rectified Forward Current @ TC

= 115

?C8A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

80 A

TJ, TSTG

Operating Junction and Storage Temperature - 65 to +150

Symbol Parameter Max. Unit

R?JC

Maximum Thermal Resistance, Junction to Case 2.5

?C/W

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFP08S60STU FFP08S60S TO-220-2L Tube N/A N/A

= 25°C unless otherwise noted

Package Marking and Ordering Information

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